| PART |
Description |
Maker |
| MX26LV400TXEC-70G MX26LV400 MX26LV400BTC-55 MX26LV |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| K6R4004C1C-C K6R4004C1C-I20 K6R4004C1C-C10 K6R4004 |
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAM5V的工作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX26LV400TXBC-55G MX26LV400BXBC-70G MX26LV400TXBC- |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
http://
|
| IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM
128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
55ns; 5V; 128K x 8 high-speed CMOS static RAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| IDT7130SA20PF IDT7130SA25PF IDT7130SA IDT7130SA25C |
Dual Integrated Solenoid Driver; Package: MLP 8x12; No of Pins: 18; Container: Tape & Reel
30V N-Channel PowerTrench SyncFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CQFP48
Single P-Channel Logic Level PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
Single P-Channel Logic Level PowerTrench MOSFET 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQFP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQFP48
Asynchronous Communications Element With Autoflow Control 48-LQFP 0 to 70 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
| CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM
262144-word x 8-bit High Speed CMOS Static RAM
|
Vishay Intertechnology, Inc.
SONY
|
